α-Ga2 O3 grown by low temperature atomic layer deposition on sapphire
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Description
Keywords
Semiconducting gallium compounds, Oxides, Atomic layer epitaxy, X-ray diffraction, Scanning electron diffraction
Journal Title
Journal of Crystal Growth
Conference Name
Journal ISSN
0022-0248
1873-5002
1873-5002
Volume Title
487
Publisher
Elsevier BV
Publisher DOI
Sponsorship
European Research Council (279361)
European Research Council (291522)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/L015978/1)
European Research Council (291522)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/L015978/1)