Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material.
Proceedings of the National Academy of Sciences of the United States of America
National Academy of Sciences
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Konstantinou, K., Lee, T., Mocanu, F., & Elliott, S. (2018). Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material.. Proceedings of the National Academy of Sciences of the United States of America, 115 (21), 5353-5358. https://doi.org/10.1073/pnas.1800638115
The radiation-hardness of amorphous Ge2Sb2Te5 phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionising radiation events have been modelled in order to investigate their effect on the atomic and electronic structure of the glass. Investigation of the short- and medium-range order highlights a structural recovery of the amorphous network after exposure to the high-energy events modelled in this study. Analysis of the modelled glasses reveals specific structural rearrangements in the local atomic geometry of the glass, as well as an increase in the formation of large shortest-path rings. The electronic structure of the modelled system is not significantly affected by the ionising radiation events, since negligible differences have been observed before and after irradiation. These results provide a detailed insight into the atomistic structure of amorphous Ge2Sb2Te5 after irradiation and demonstrate the radiation-hardness of the glass matrix.
External DOI: https://doi.org/10.1073/pnas.1800638115
This record's URL: https://www.repository.cam.ac.uk/handle/1810/278677