Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.
Authors
Wang, Xiaoshan
Wang, Zhiwei
Zhang, Jindong
Wang, Xiang
Zhang, Zhipeng
Wang, Jialiang
Zhu, Zhaohua
Li, Zhuoyao
Liu, Yao
Hu, Xuefeng
Qiu, Junwen
Chen, Bo
Wang, Ning
He, Qiyuan
Chen, Junze
Yan, Jiaxu
Zhang, Wei
Li, Shaozhou
Wang, Qiang
Huang, Wei
Publication Date
2018-09-06Journal Title
Nat Commun
ISSN
2041-1723
Publisher
Springer Science and Business Media LLC
Volume
9
Issue
1
Pages
3611
Language
eng
Type
Article
Physical Medium
Electronic
Metadata
Show full item recordCitation
Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., Zhu, Z., et al. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.. Nat Commun, 9 (1), 3611. https://doi.org/10.1038/s41467-018-06053-z
Abstract
The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 and 1T-WS2 induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2 nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2 heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.
Identifiers
External DOI: https://doi.org/10.1038/s41467-018-06053-z
This record's URL: https://www.repository.cam.ac.uk/handle/1810/280579
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