Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.
Springer Science and Business Media LLC
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Wang, X., Wang, Z., Zhang, J., Wang, X., Zhang, Z., Wang, J., Zhu, Z., et al. (2018). Realization of vertical metal semiconductor heterostructures via solution phase epitaxy.. Nat Commun, 9 (1), 3611. https://doi.org/10.1038/s41467-018-06053-z
The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 and 1T-WS2 induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2 nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2 heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.
External DOI: https://doi.org/10.1038/s41467-018-06053-z
This record's URL: https://www.repository.cam.ac.uk/handle/1810/280579
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/