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dc.contributor.authorLee, Lok Yi
dc.contributor.authorFrentrup, M
dc.contributor.authorKappers, Menno
dc.contributor.authorOliver, Rachel
dc.contributor.authorHumphreys, Collin
dc.contributor.authorWallis, David
dc.date.accessioned2018-09-24T07:12:06Z
dc.date.available2018-09-24T07:12:06Z
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/280667
dc.descriptionFigure 1: XRD intensity profile through the 1-103wz and 113zb reflections for the samples grown on a 4° miscut substrate at 875°C and a V/III-ratio of 76 (a), and 1200 (b). Figure 4: Feature sizes in (a) [110] and (b) [1-10] directions extracted from 2D-FFT of AFM height data of zb-GaN epilayers grown at different growth temperatures and a constant V/III-ratio of 76. (c) Variation of the aspect ratio of surface features with growth temperature. (d) Variation of root mean square surface roughness with growth temperature. Figure 5: Zb-GaN content determined by XRD as a function of the GaN epilayer growth temperature. Figure 8: Feature sizes in (a) [110] and (b) [1-10] directions extracted from 2D-FFT of AFM height data of the zb-GaN epilayers grown at different V/III-ratios and a constant growth temperature of 875 °C. (c) Variation of aspect ratio of surface features with V/III ratio. For (a) to (c), there are no data points for the sample grown at a V/III-ratio of 15, as it was not possible to extract feature sizes using the same 2D-FFT method as for other sample in the series. (d) Variation of root mean square surface roughness with V/III-ratio. The labels i, ii and iii indicate the proposed growth regimes. Figure 11: Relative intensities of the zb-GaN XRD peaks for samples in the V/III-ratio series at a constant growth temperature of 875 °C.
dc.formatNotepad, Text editor, Notepad++
dc.rightsAttribution 4.0 International (CC BY 4.0)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectcubic zincblende GaN
dc.subjectMOVPE
dc.subjectmorphology
dc.subjectsurface roughness
dc.subjectgrowth model
dc.titleResearch data supporting "Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN"
dc.typeDataset
dc.identifier.doi10.17863/CAM.25946
rioxxterms.licenseref.urihttps://creativecommons.org/licenses/by/4.0/
dcterms.format.txt
dc.contributor.orcidLee, Lok Yi [0000-0002-4065-2084]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidWallis, David [0000-0002-0475-7583]
rioxxterms.typeOther
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/R01146X/1)
pubs.funder-project-idTechnology Strategy Board (TS/N003756/1 - 132135)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/N01202X/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P03036X/1)
datacite.issupplementto.doi10.1063/1.5046801
datacite.issupplementto.urlhttps://www.repository.cam.ac.uk/handle/1810/285120


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Attribution 4.0 International (CC BY 4.0)
Except where otherwise noted, this item's licence is described as Attribution 4.0 International (CC BY 4.0)