Native point defects of semiconducting layered Bi2O2Se.
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Publication Date
2018-07-19Journal Title
Sci Rep
ISSN
2045-2322
Publisher
Springer Science and Business Media LLC
Volume
8
Issue
1
Pages
10920
Language
eng
Type
Article
Physical Medium
Electronic
Metadata
Show full item recordCitation
Li, H., Xu, X., Zhang, Y., Gillen, R., Shi, L., & Robertson, J. (2018). Native point defects of semiconducting layered Bi2O2Se.. Sci Rep, 8 (1), 10920. https://doi.org/10.1038/s41598-018-29385-8
Abstract
Bi2O2Se is an emerging semiconducting, air-stable layered material (Nat. Nanotechnol. 2017, 12, 530; Nano Lett. 2017, 17, 3021), potentially exceeding MoS2 and phosphorene in electron mobility and rivalling typical Van der Waals stacked layered materials in the next-generation high-speed and low-power electronics. Holding the promise of functional versatility, it is arousing rapidly growing interest from various disciplines, including optoelectronics, thermoelectronics and piezoelectronics. In this work, we comprehensively study the electrical properties of the native point defects in Bi2O2Se, as an essential step toward understanding the fundamentals of this material. The defect landscapes dependent on both Fermi energy and the chemical potentials of atomic constituents are investigated. Along with the bulk defect analysis, a complementary inspection of the surface properties, within the simple context of charge neutrality level model, elucidates the observed n-type characteristics of Bi2O2Se based FETs. This work provides important guide to engineer the defects of Bi2O2Se for desired properties, which is key to the successful application of this emerging layered material27.
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)
Identifiers
External DOI: https://doi.org/10.1038/s41598-018-29385-8
This record's URL: https://www.repository.cam.ac.uk/handle/1810/285701
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