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dc.contributor.authorChristian, GMen
dc.contributor.authorSchulz, Sen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorHumphreys, CJen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorDawson, Pen
dc.date.accessioned2018-12-08T00:30:28Z
dc.date.available2018-12-08T00:30:28Z
dc.date.issued2018-10-02en
dc.identifier.issn2469-9950
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/286508
dc.titleRecombination from polar InGaN/GaN quantum well structures at high excitation carrier densitiesen
dc.typeArticle
prism.issueIdentifier15en
prism.publicationDate2018en
prism.publicationNamePhysical Review Ben
prism.volume98en
dc.identifier.doi10.17863/CAM.33818
rioxxterms.versionofrecord10.1103/PhysRevB.98.155301en
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2018-10-02en
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.identifier.eissn2469-9969
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/M010589/1)
pubs.funder-project-idEPSRC (EP/I012591/1)
rioxxterms.freetoread.startdate2019-10-02


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