Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
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Authors
Christian, GM
Schulz, S
Kappers, Menno
Humphreys, CJ
Oliver, Rachel
Dawson, P
Publication Date
2018-10-02Journal Title
Physical Review B
ISSN
2469-9950
Volume
98
Issue
15
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Christian, G., Schulz, S., Kappers, M., Humphreys, C., Oliver, R., & Dawson, P. (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, 98 (15)https://doi.org/10.1103/PhysRevB.98.155301
Sponsorship
EPSRC (EP/M010589/1)
EPSRC (EP/I012591/1)
Identifiers
External DOI: https://doi.org/10.1103/PhysRevB.98.155301
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286508
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