Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Christian, GM; Schulz, S; Kappers, Menno; Humphreys, CJ; Oliver, Rachel; Dawson, P

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Authors

Christian, GM

Schulz, S

Kappers, Menno

Humphreys, CJ

Oliver, Rachel

Dawson, P

Publication Date

2018-10-02

Journal Title

Physical Review B

ISSN

2469-9950

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Article

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Christian, G., Schulz, S., Kappers, M., Humphreys, C., Oliver, R., & Dawson, P. (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, 98 (15)https://doi.org/10.1103/PhysRevB.98.155301

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EPSRC (EP/M010589/1)

EPSRC (EP/I012591/1)

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External DOI: https://doi.org/10.1103/PhysRevB.98.155301

This record's URL: https://www.repository.cam.ac.uk/handle/1810/286508

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