Energetic disorder at the metal-organic semiconductor interface
Accepted version
Peer-reviewed
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Repository DOI
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Authors
Novikov, SV
Malliaras, GG
Abstract
The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed. © 2006 The American Physical Society.
Description
Keywords
cond-mat.mtrl-sci, cond-mat.mtrl-sci
Journal Title
Physical Review B - Condensed Matter and Materials Physics
Conference Name
Journal ISSN
1098-0121
1550-235X
1550-235X
Volume Title
73
Publisher
American Physical Society (APS)
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Sponsorship
This work was supported by the ISTC Grant No. 2207 and RFBR Grant Nos. 05-03-33206 and 03-03-33067. The research described in this publication was made possible in part by Award No. RE2-2524-MO-03 of the U.S. Civilian Research and Development Foundation for the Independent States of the Former Soviet Union (CRDF).