Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Jarman, John https://orcid.org/0000-0001-8095-8603
Zhu, Tongtong https://orcid.org/0000-0002-9481-8203
Griffin, Peter https://orcid.org/0000-0003-4239-9227
Oliver, Rachel https://orcid.org/0000-0003-0029-3993
Abstract
Utilising our novel wafer-scale electrochemical porosification approach which proceeds through the top surface by means of nanoscale vertical etching pathways, we have prepared full 2 inch wafers containing alternating solid GaN and nanoporous GaN (NP-GaN) layers that form distributed Bragg reflectors (DBRs), and have regrown InGaN-based light emitting diode (LED) heterostructures on these wafers. The NP-GaN DBR wafer is epi-ready and exhibits a peak reflectance of 95% at 420 nm prior to growth of the LED heterostructure. We observe a 1.8× enhancement in peak intensity of LED electroluminescence from processed devices, and delayed onset of efficiency droop with increased injection current.
Description
Keywords
40 Engineering, 4016 Materials Engineering
Journal Title
Japanese Journal of Applied Physics
Conference Name
Journal ISSN
1347-4065
1347-4065
1347-4065
Volume Title
Publisher
IOP Publishing
Publisher DOI
Rights
All rights reserved
Sponsorship
EPSRC (1642226)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
EPSRC (1645842)
EPSRC (1645842)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)
EPSRC (1645842)
EPSRC (1645842)
This work was supported partly by the UK Engineering and Physical Sciences Research Council Grant No. EP/M011682/1 and the EPSRC Impact Acceleration Account Follow on Fund of the University of Cambridge.