Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
Japanese Journal of Applied Physics
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Jarman, J., Zhu, T., Griffin, P., & Oliver, R. (2019). Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates. Japanese Journal of Applied Physics https://doi.org/10.7567/1347-4065/ab0cfd
Utilising our novel wafer-scale electrochemical porosification approach which proceeds through the top surface by means of nanoscale vertical etching pathways, we have prepared full 2 inch wafers containing alternating solid GaN and nanoporous GaN (NP-GaN) layers that form distributed Bragg reflectors (DBRs), and have regrown InGaN-based light emitting diode (LED) heterostructures on these wafers. The NP-GaN DBR wafer is epi-ready and exhibits a peak reflectance of 95% at 420 nm prior to growth of the LED heterostructure. We observe a 1.8× enhancement in peak intensity of LED electroluminescence from processed devices, and delayed onset of efficiency droop with increased injection current.
Is supplemented by: https://doi.org/10.17863/CAM.37335
This work was supported partly by the UK Engineering and Physical Sciences Research Council Grant No. EP/M011682/1 and the EPSRC Impact Acceleration Account Follow on Fund of the University of Cambridge.
External DOI: https://doi.org/10.7567/1347-4065/ab0cfd
This record's URL: https://www.repository.cam.ac.uk/handle/1810/292853
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