Show simple item record

dc.contributor.authorTang, Fen
dc.contributor.authorZhu, Tongtongen
dc.contributor.authorFu, WYen
dc.contributor.authorOehler, Fen
dc.contributor.authorZhang, Sen
dc.contributor.authorGriffiths, JTen
dc.contributor.authorHumphreys, Cen
dc.contributor.authorMartin, TLen
dc.contributor.authorBagot, PAJen
dc.contributor.authorMoody, MPen
dc.contributor.authorPatra, SKen
dc.contributor.authorSchulz, Sen
dc.contributor.authorDawson, Pen
dc.contributor.authorChurch, Sen
dc.contributor.authorJacobs, Jen
dc.contributor.authorOliver, Rachelen
dc.date.accessioned2019-05-29T23:30:49Z
dc.date.available2019-05-29T23:30:49Z
dc.date.issued2019-06-14en
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/293243
dc.description.abstractWe investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for non-random clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this clustering, we develop a k.p model that takes these features into account, and links the observed nanostructure to the optical properties of the quantum wells. The calculations show that electrons and holes tend to co-localise at indium clusters. The transition energies between the electron and hole states are strongly affected by the shape and size of the clusters. Hence, clustering contributes to the very large line widths observed in the experimental low temperature photoluminescence spectra. Also, the emission from m-plane InGaN quantum wells is strongly linearly polarised. Clustering does not alter the theoretically predicted polarisation properties, even when the shape of the cluster is strongly asymmetric. Overall, however, we show that the presence of clustering does impact the optical properties, illustrating the importance of careful characterisation of the nanoscale structure of m-plane InGaN quantum wells and that atom probe tomography is a useful and important tool to address this problem.
dc.publisherAmerican Institute of Physics
dc.rightsAll rights reserved
dc.rights.uri
dc.titleInsight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m -plane freestanding GaN substratesen
dc.typeArticle
prism.issueIdentifier22en
prism.publicationDate2019en
prism.publicationNameJournal of Applied Physicsen
prism.volume125en
dc.identifier.doi10.17863/CAM.40393
dcterms.dateAccepted2019-05-25en
rioxxterms.versionofrecord10.1063/1.5097411en
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2019-06-14en
dc.contributor.orcidTang, F [0000-0002-9937-0620]
dc.contributor.orcidZhu, Tongtong [0000-0002-9481-8203]
dc.contributor.orcidFu, WY [0000-0002-4973-3550]
dc.contributor.orcidOehler, F [0000-0003-1020-160X]
dc.contributor.orcidZhang, S [0000-0001-7045-0865]
dc.contributor.orcidMartin, TL [0000-0001-8621-7881]
dc.contributor.orcidBagot, PAJ [0000-0002-9102-6083]
dc.contributor.orcidPatra, SK [0000-0003-2537-7210]
dc.contributor.orcidDawson, P [0000-0002-5954-4470]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.identifier.eissn1089-7550
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/J003603/1)
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEPSRC (EP/M010589/1)
pubs.funder-project-idEPSRC (EP/M011682/1)
pubs.funder-project-idEPSRC (EP/H047816/1)
cam.orpheus.successThu Jan 30 10:44:31 GMT 2020 - Embargo updated*
rioxxterms.freetoread.startdate2019-06-14


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record