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dc.contributor.authorGuo, Yen
dc.contributor.authorLi, Hen
dc.contributor.authorZhang, Wen
dc.contributor.authorRobertson, Johnen
dc.date.accessioned2019-11-10T00:30:33Z
dc.date.available2019-11-10T00:30:33Z
dc.date.issued2019-10-14en
dc.identifier.issn0003-6951
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/298780
dc.description.abstractOvonic threshold switches are a favored choice for chalcogenide-based amorphous (a-) GeSex selector devices used in cross-point arrays of nonvolatile memories. Previous models of their nonlinear high-field conduction proposed a largely electronic-only switching mechanism, within a fixed density of electronic states. Here, we use a density functional molecular-dynamics supercell calculation to show that the high-current excited state configuration of a-GeSex has structural changes such as additional Ge-Ge bonds and overcoordinated Ge sites, giving lower effective mass, more delocalized conduction states, and a lower ON resistance.
dc.description.sponsorshipWe acknowledge the funding from the EC H2020 project Phase change switch.
dc.publisherAIP Publishing
dc.rightsAll rights reserved
dc.rights.uri
dc.titleStructural changes during the switching transition of chalcogenide selector devicesen
dc.typeArticle
prism.issueIdentifier16en
prism.publicationDate2019en
prism.publicationNameApplied Physics Lettersen
prism.volume115en
dc.identifier.doi10.17863/CAM.45835
dcterms.dateAccepted2019-10-06en
rioxxterms.versionofrecord10.1063/1.5125215en
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2019-10-14en
dc.identifier.eissn1077-3118
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)


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