Data supporting "Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices"
Di Nuzzo, Daniele
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Di Nuzzo, D., Mizuta, R., Nakanishi, K., Aria, I., Martin, M., Weatherup, R., Friend, R., et al. (2020). Data supporting "Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices" [Dataset]. https://doi.org/10.17863/CAM.51196
Figure 1: (d) Raman spectrum of few-layer graphene on Ni. (e) XPS of Ni 2p3/2 region of sputtered Ni (Ni/NiOx) and Ni after multilayer graphene growth (Ni/FLG), with peak fitting indicating metallic nickel (NiM) and nickel oxide (NiOx). (f) Magnetic moment measured at room temperature by DC-mode SQUID magnetometry of graphene-passivated Ni films for magnetic fields parallel and perpendicular to the plane of the film. Figure 2: (b) Comparison of hole injection into F8BT from graphene-passivated Ni and PEDOT:PSS bottom contacts, each using a top contact of MoO3 / Au. (c) Binding energy, referenced to the Fermi level, measured on a Ni/FLG sample by means of UPS (excitation light with energy = 21.21 eV). (d) Hole injection into P3HT from graphene-passivated Ni, with MoO3 /Au top contact. Figure 3: Current density hysteresis as a function of voltage for hole injection into F8BT using (a) unprotected sputtered Ni electrodes and (b) graphene-passivated Ni.
Publication Reference: https://doi.org/10.1063/5.0002222https://www.repository.cam.ac.uk/handle/1810/303953
Royal Commission for the Exhibition of 1851 (RF474/2016)
Royal Society (DHF\F1\191163)
This record's DOI: https://doi.org/10.17863/CAM.51196