Porosity in Nitride Semiconductors: Supplementary Material
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Griffin, P. (2020). Porosity in Nitride Semiconductors: Supplementary Material [Dataset]. https://doi.org/10.17863/CAM.52027
This dataset contains supplementary material to Peter Griffin's PhD thesis: "Porosity in Nitride Semiconductors". The data consists of one high resolution image and three videos: - Image1.png shows aligned optical and SEM images, revealing the corellation between the micro and macro structure of a thick porous layer. This data is discussed in section 18.104.22.168 of the thesis. - Video1.avi shows sequential SEM images of the region around a V-pit in a porous GaN DBR, milled by FIB, thus showing how the pore structure changes with depth. This data is discussed in section 4.2.3 of the thesis. - Video2.avi shows serial block-face imaging (SBI) data obtained from sequential FIB-SEM of a porous GaN DBR. This data is discussed in section 22.214.171.124 of the thesis. - Video3.mp4 shows the data shown in Video2, reconstructed to show the pore structure of each layer of a porous GaN DBR. This data is discussed in section 126.96.36.199 of the thesis.
Standard image and video formats. Many software options.
Semiconductor Physics, Porous Materials, FIB-SEM, Electron Microscopy, Gallium Nitride
Publication Reference: https://doi.org/10.17863/CAM.53005
This record's DOI: https://doi.org/10.17863/CAM.52027