Crystalline Silicon Heterojunction Solar Cell With 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only.
2020 47th IEEE Photovoltaic Specialists Conference (PVSC)
47th IEEE Photovoltaic Specialists Conference
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Ore, E., & Amaratunga, G. (2021). Crystalline Silicon Heterojunction Solar Cell With 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only.. 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC45281.2020.9300506
It is shown here that silicon (Si) based solar cells can be deposited by physical vapour deposition (PVD) methods only. These cells are called the PVD-Si cells. Their processing eliminates the deposition methods involving high temperature processing steps, and / or expensive, toxic and flammable gases used for processing conventional solar cells with Si absorbers. The PVD-Si cell design investigated has the structure of ITO | MoOx | c-Si | LiF | Al. When this cell is deposited on an untextured crystalline (c-Si) wafer, it has a fill factor value of 81.6% under the standard test conditions (STC). In order to improve the amount of short-circuit current density (Jsc) generated, this cell is also demonstrated on a textured c-Si wafer, achieving Jsc of 35.94 mA/cm2 under STC.
Yunnan Normal University (unknown)
External DOI: https://doi.org/10.1109/PVSC45281.2020.9300506
This record's URL: https://www.repository.cam.ac.uk/handle/1810/315981
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