Research data supporting "Defect structures in (001) zincblende GaN/3C-SiC nucleation layers"
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Authors
Vacek, Petr https://orcid.org/0000-0002-1625-9258
Frentrup, Martin
Lee, Lok Yi
Massabuau, Fabien C-P
Kappers, Menno J
Description
The data file "facet angle AFM" contains the full datasets of facet angles measured by AFM of a nominally 3 nm-thick annealed GaN NL grown on 3C-SiC. The individual islands have been approached by front of the AFM tip along the fast scan direction, which was along [110] (along the short axis of the islands). Linescans have been taken parallel to fast scan direction in direction of the approaching tip. Angles have been measured between the facets and the surrounding surface. To determine the facet angle of the other site of the islands, the sample has been rotated by 180° prior to another AFM measurement.
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Keywords
Nitrides, GaN, zincblende, Transmission electron microscopy, Nucleation, Defects, stacking faults
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Engineering and Physical Sciences Research Council (EP/N01202X/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
Engineering and Physical Sciences Research Council (EP/P03036X/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
Engineering and Physical Sciences Research Council (EP/P03036X/1)
We would like to thank Innovate UK for the financial support within the Energy Catalyst Round 4 - Mid Stage Feasibility scheme (Ref. 102766), and EPSRC for support through grant no. EP/M010589/1 and grant no. EP/R01146X/1. P Vacek would like to thank the Ministry of Education, Youth and Sports of the Czech Republic (MEYS CR) for supporting a 6-month research stay at the Cambridge Centre for Gallium Nitride through the project no. CZ.02.2.69/0.0/0.0/16_027/0008056. The CzechNanoLab project LM2018110 funded by the MEYS CR is gratefully acknowledged for the financial support of the measurements at CEITEC Nano Research Infrastructure. DJ Wallis would like to acknowledge support from EPSRC Manufacturing fellowship, EP/N01202X/2.