Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells
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jats:titleAbstract</jats:title> jats:pMicro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of emission efficiency on carrier density, excitation power-dependent emission was collected from a bright and dark region on each of blue-and green emitting samples. The onset of efficiency droop was found to occur at a greater carrier density in the dark regions than in the bright, by factors of 1.2 and 1.8 in the blue and green-emitting samples, respectively. By spatially integrating the emission from progressively larger areas, it is also shown that collection areas greater than ∼50 μm in diameter are required to reduce the intensity variation to less than 10%.</jats:p>
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1742-6596
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Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)