Research data supporting "Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1-xN nucleation layers"
Description
The data consists of Scanning transmission electron microscopy based Energy-dispersive X-ray spectroscopy measurements. Data consists of the information from the Line profile obtained across the AlGaN (x=0.29) nucleation layer for different elements such as Si Kα, Pt Mα, Ga Lα, Al Kα.
The second file (dm3 file) is a cross-sectional HRTEM image (zone axis = [110]) of the zb-GaN epilayer on GaN NL grown over 3C-SiC, shown in figure 1 of the associated publication (https://doi.org/10.1063/5.0077186).
Format
The .txt file can be opened using text editor
The .dm3 file can be opened using the software package Gatan DigitalMicrograph (also known as Gatan Microscopy Suite).
Keywords
TEM, zincblende GaN
Relationships
Publication Reference: https://doi.org/10.1063/5.0077186
Sponsorship
We would like to thank EPSRC for support through grant no. EP/M010589/1 and grant no. EP/R01146X/1. DJ Wallis would like to acknowledge support through EPSRC fellowship EP/N01202X/2.
Funder references
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
Embargo Lift Date
2100-01-01
Identifiers
This record's DOI: https://doi.org/10.17863/CAM.81573
Rights
Attribution 4.0 International (CC BY 4.0)
Licence URL: https://creativecommons.org/licenses/by/4.0/
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Except where otherwise noted, this item's licence is described as Attribution 4.0 International (CC BY 4.0)