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Data supporting "Revisiting multiple trapping and release charge transport in amorphous semiconductors exemplified by hydrogenated amorphous silicon"


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This dataset includes all the nonschematic figures and subfigures in the associated paper. It includes:

  1. Fig. 2(a) in the paper: The band edge spatial fluctuation of the a-Si:H 2.5-dimension (2.5D) model developed in the prequel paper. Fig. 2(a).xls file records the data and is used to produce the spatial geometries of several representative extended and localized states in Fig. 2(b) as well as in the upper half of Fig. 5(a), (b) and (c).

  1. Fig. 2(c) in the paper: A semi-quantification of relaxation probability. Fig. 2(c).xls file provides the data of the multiplication of density of states (DOS) [g(E)] and the inoccupation probability [1-f(E)].

  1. Fig. 2(d): The probability density function of local band edge, which is the basis of the ideal band fluctuation model in this paper. Fig. 2(d).xls is a duplication of the data of FIG. 1(e) in the prequel paper.

  1. Fig. 2(e): The band edge fluctuation of an ideal model developed in this paper (details, see Appendix A). Fig. 2(e).xls file records the data and is used to produce the spatial geometries of several representative extended and localized states in Fig. 2(f) as well as in the lower half of Fig. 5(a), (b) and (c).

  1. Fig. 6(a): The DOS result in the prequel paper. Fig. 6(a).xls is a duplication of the data of FIG. 1(d) in the prequel paper.

  1. Fig. 6(b): The TOF drift mobility data from previous literature and through fitting. Fig. 6(b).xls shows both the experimental raw data and the fitting data.

  1. Fig. A.1(b): The one-dimensional (1D) spatial variation of local band edge in the ideal model. FIG. A.1(b).xls file contains the 1D data.

Please also refer to the readme file for more information. The contents in this zip file and the corresponding paper are under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the authors and the published article’s title, journal citation, and DOI.

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Software / Usage instructions

These data can be used in ordinary data processing software such as OriginPro to reproduce the visualization in the corresponding paper.

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Except where otherwised noted, this item's license is described as Attribution 4.0 International (CC BY 4.0)
Sponsorship
EPSRC (EP/W009757/1)
UKRI Engineering and Physical Sciences Research Council under grant number EP/W009757/1; Rank Prize Return to Research Grant; Cambridge Commonwealth, European and International Trust Scholarship