Repository logo
 

Extending the metal-induced gap state model of Schottky barriers

Accepted version
Peer-reviewed

Type

Article

Change log

Authors

Robertson, John 
Guo, Yuzheng 
Li, Hongfei 

Abstract

Fermi level pinning at Schottky barriers strongly limits the minimization of contact resistances in devices and thereby limits the scaling of modern Si electronic devices, so it is useful to understand the full range of behaviors of Schottky barriers. The authors find that some semiconductor interfaces with compound metals like silicides have apparently weaker Fermi level pinning. This occurs as these metals have an underlying covalent skeleton, whose interfaces with semiconductors lead to miscoordinated defect sites that create additional localized interface states that go beyond the standard metal-induced gap states (MIGSs) model of Schottky barriers. This causes a stronger dependence of Schottky barrier height on the metal and on interface orientation. These states are argued to be an additional component needed to extend the MIGS model.

Description

Keywords

51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

Journal of Vacuum Science & Technology B

Conference Name

Journal ISSN

2166-2746
2166-2754

Volume Title

38

Publisher

American Vacuum Society

Rights

All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/P005152/1)