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Alloy fluctuations at dislocations in III-Nitrides: identification and impact on optical properties

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cam.issuedOnline2018-02-23
cam.orpheus.successThu Jan 30 13:04:31 GMT 2020 - The item has an open VoR version.
dc.contributor.authorMassabuau, FCP
dc.contributor.authorChen, P
dc.contributor.authorRhode, SL
dc.contributor.authorHorton, MK
dc.contributor.authorO'Hanlon, TJ
dc.contributor.authorKovacs, A
dc.contributor.authorZielinski, MS
dc.contributor.authorKappers, M
dc.contributor.authorDunin-Borkowski, RE
dc.contributor.authorHumphreys, C
dc.contributor.authorOliver, R
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.date.accessioned2018-07-30T08:49:34Z
dc.date.available2018-07-30T08:49:34Z
dc.description.abstractWe investigated alloy fluctuations at dislocations in III-Nitride alloys (InGaN and AlGaN). We found that in both alloys, atom segregation (In segregation in InGaN and Ga segregation in AlGaN) occurs in the tensile part of dislocations with an edge component. In InGaN, In atom segregation leads to an enhanced formation of In-N chains and atomic condensates which act as carrier localization centers. This feature results in a bright spot at the position of the dislocation in the CL images, suggesting that non-radiative recombination at dislocations is impaired. On the other hand, Ga atom segregation at dislocations in AlGaN does not seem to noticeably affect the intensity recorded by CL at the dislocation. This study sheds light on why InGaN-based devices are more resilient to dislocations than AlGaN-based devices. An interesting approach to hinder non-radiative recombination at dislocations may therefore be to dope AlGaN with In.
dc.description.sponsorshipERC
dc.identifier.doi10.17863/CAM.25868
dc.identifier.issn0277-786X
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/278529
dc.languageeng
dc.language.isoeng
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)
dc.publisher.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10532/2288211/Alloy-fluctuations-at-dislocations-in-III-nitrides--identification-and/10.1117/12.2288211.full?SSO=1
dc.titleAlloy fluctuations at dislocations in III-Nitrides: identification and impact on optical properties
dc.typeArticle
dcterms.dateAccepted2018-02-15
prism.number105320R
prism.publicationNameProceedings of SPIE - The International Society for Optical Engineering
prism.volume10532
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)
rioxxterms.licenseref.startdate2018-02-15
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionVoR
rioxxterms.versionofrecord10.1117/12.2288211

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