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Influence of precursor dose and residence time on the growth rate and uniformity of vanadium dioxide thin films by atomic layer deposition

Published version
Peer-reviewed

Type

Article

Change log

Authors

Bai, G 
Robertson, J 

Abstract

jats:pThe growth of vanadium dioxide (VO2) thin films using tetrakis (ethyl-methyl) amino vanadium (TEMAV) and H2O by atomic layer deposition (ALD) has been investigated as a function of the exposure dose and residence time. A novel multiple pulse mode has been employed to mitigate the small deposition rate brought about by the low vapor pressure of TEMAV. Compared to the conventional ALD cycle with a single pulse of precursor, the use of multiple pulsing with very short pulse time allows lower consumption of precursor, but larger exposure dose and longer residence time on the growth surface, resulting in a higher growth rate for a low volatility precursor, while maintaining a good film uniformity across 4-in. wafers. The Raman analysis and the electrical resistivity modulation of the VO2 thin films show that the films synthesized by the multiple pulse mode is comparable to the films synthesized by the conventional single pulse mode.</jats:p>

Description

Keywords

40 Engineering, 4018 Nanotechnology

Journal Title

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Conference Name

Journal ISSN

0734-2101
1520-8559

Volume Title

38

Publisher

American Vacuum Society

Rights

All rights reserved
Sponsorship
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)