CMOS-compatible SOI micro-hotplate-based oxygen sensor

© 2016 IEEE. The paper reports upon the design and characterization of a resistive O2 sensor, which is fully CMOS-compatible and is based on an ultra-low-power Silicon on Insulator (SOI) micro-hotplate membrane. The microsensor employs SrTi0.4Fe0.6O2.8 (STFO60) as sensing layer. Thermo-Gravimetric Analysis (TGA) Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) techniques have been used to assess the quality of both the sensing layer and STFO-SOI interface. At room temperature, the SOI sensor shows good sensitivity and fast response time (≤ 6 seconds) to O2 concentration ranging from 0% to 20% in a nitrogen atmosphere. This is the first experimental result showing the potential of this structure as O2 sensor.

Keywords

4605 Data Management and Data Science, 46 Information and Computing Sciences, 40 Engineering, 4016 Materials Engineering

Journal Title

European Solid-State Device Research Conference

Conference Name

46th European Solid-State Device Research Conference (ESSDERC 2016)

Journal ISSN

1930-8876

Volume Title

2016-October

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publisher DOI

https://doi.org/10.1109/ESSDERC.2016.7599640

Rights and licensing

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Sponsorship

Engineering and Physical Sciences Research Council (EP/K035282/1)

Collections

University of Cambridge Research Outputs (Articles and Conferences)