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Temperature Effects in the Band Structure of Topological Insulators.

cam.issuedOnline2016-11-22
dc.contributor.authorMonserrat, Bartomeu
dc.contributor.authorVanderbilt, David
dc.contributor.orcidMonserrat Sanchez, Bartomeu [0000-0002-4233-4071]
dc.date.accessioned2018-11-21T00:30:30Z
dc.date.available2018-11-21T00:30:30Z
dc.date.issued2016-11-25
dc.description.abstractWe study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.
dc.identifier.doi10.17863/CAM.32864
dc.identifier.eissn1079-7114
dc.identifier.issn0031-9007
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/285506
dc.languageeng
dc.language.isoeng
dc.publisherAmerican Physical Society (APS)
dc.publisher.urlhttp://dx.doi.org/10.1103/physrevlett.117.226801
dc.subject0912 Materials Engineering
dc.titleTemperature Effects in the Band Structure of Topological Insulators.
dc.typeArticle
dcterms.dateAccepted2016-09-23
prism.endingPage226801
prism.issueIdentifier22
prism.publicationDate2016
prism.publicationNamePhys Rev Lett
prism.startingPage226801
prism.volume117
rioxxterms.licenseref.startdate2016-11-25
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionAM
rioxxterms.versionofrecord10.1103/PhysRevLett.117.226801

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