Temperature Effects in the Band Structure of Topological Insulators.
cam.issuedOnline | 2016-11-22 | |
dc.contributor.author | Monserrat, Bartomeu | |
dc.contributor.author | Vanderbilt, David | |
dc.contributor.orcid | Monserrat Sanchez, Bartomeu [0000-0002-4233-4071] | |
dc.date.accessioned | 2018-11-21T00:30:30Z | |
dc.date.available | 2018-11-21T00:30:30Z | |
dc.date.issued | 2016-11-25 | |
dc.description.abstract | We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters. | |
dc.identifier.doi | 10.17863/CAM.32864 | |
dc.identifier.eissn | 1079-7114 | |
dc.identifier.issn | 0031-9007 | |
dc.identifier.uri | https://www.repository.cam.ac.uk/handle/1810/285506 | |
dc.language | eng | |
dc.publisher | American Physical Society (APS) | |
dc.publisher.url | http://dx.doi.org/10.1103/physrevlett.117.226801 | |
dc.subject | 0912 Materials Engineering | |
dc.title | Temperature Effects in the Band Structure of Topological Insulators. | |
dc.type | Article | |
dcterms.dateAccepted | 2016-09-23 | |
prism.endingPage | 226801 | |
prism.issueIdentifier | 22 | |
prism.publicationDate | 2016 | |
prism.publicationName | Phys Rev Lett | |
prism.startingPage | 226801 | |
prism.volume | 117 | |
rioxxterms.licenseref.startdate | 2016-11-25 | |
rioxxterms.licenseref.uri | http://www.rioxx.net/licenses/all-rights-reserved | |
rioxxterms.type | Journal Article/Review | |
rioxxterms.version | AM | |
rioxxterms.versionofrecord | 10.1103/PhysRevLett.117.226801 |
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