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Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Accepted version
Peer-reviewed

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Abstract

jats:pPorosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the realization of complex three-dimensional porous nanostructures, potentially offering a wide range of functionalities, such as in-distributed Bragg reflectors. Porous/non-porous multilayers can be formed by etching the whole, as-grown wafers uniformly in one simple process, without any additional processing steps. The etch penetrates from the top down through the undoped layers, leaving them almost untouched. Here, atomic-resolution electron microscopy is used to show that the etchant accesses the doped layers via nanometer-scale channels that form at dislocation cores and transport the etchant and etch products to and from the doped layer, respectively. Results on AlGaN and non-polar GaN multilayers indicate that the same mechanism is operating, suggesting that this approach may be applicable in a range of materials.</jats:p>

Description

Keywords

40 Engineering, 4016 Materials Engineering

Journal Title

APL Materials

Conference Name

Journal ISSN

2166-532X
2166-532X

Volume Title

8

Publisher

AIP Publishing

Rights

All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/M011682/1)