Repository logo
 

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films


Type

Article

Change log

Authors

Kozicki, MN 
Yannopoulos, SN 
Greer, AL 

Abstract

jats:pReversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge40S60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.</jats:p>

Description

Keywords

40 Engineering, 4016 Materials Engineering, Bioengineering

Journal Title

AIP Advances

Conference Name

Journal ISSN

2158-3226
2158-3226

Volume Title

5

Publisher

AIP Publishing
Sponsorship
This work was supported by World Premier International Research Center Initiative (WPI), MEXT, Japan. J.O. and A.L.G. acknowledge support from the Engineering and Physical Sciences Research Council (EPSRC, UK).