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A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

Accepted version
Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/273644

Repository DOI

https://doi.org/10.17863/CAM.12056
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Accepted version (1.03 MB)
 Supporting information (676.31 KB)

Type

Article

Change log

Authors

Sirringhaus, Henning  ORCID logo  https://orcid.org/0000-0001-9827-6061

Abstract

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.

Description

Keywords

nonvolatile memory, polymer electret, vertical organic field-effect transistors, writing speed

Journal Title

Adv Mater

Conference Name

Journal ISSN

0935-9648
1521-4095

Volume Title

29

Publisher

Wiley

Publisher DOI

https://doi.org/10.1002/adma.201604769

Rights and licensing

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Except where otherwised noted, this item's license is described as http://www.rioxx.net/licenses/all-rights-reserved
Sponsorship
X.J.S. thanks the Cambridge Overseas Trust and Chinese Scholarship Council for PhD funding.

Collections

Scholarly Works - Physics