Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors

Abstract

Achieving low-defect interfaces between industry compatible oxide dielectrics and two-dimensional (2D) transition metal dichalcogenide (TMD) semiconducting channels remains challenging but is the key for unlocking their potential for high-performance field-effect transistors (FETs). This perspective analyses the state of the art on 2D TMD and dielectric interfaces, highlighting key challenges in depositing oxide dielectrics on top of atomically thin TMD semiconductors. We provide a critical summary of exotic dielectric materials reported for FETs based on 2D TMD—including methods for their integration with TMDs. We also discuss characterization methods used to provide insight into properties of the interface between 2D TMDs and the dielectrics—in particular for identification of defects and how they influence the device performance. In addition, we provide a set of guidelines for evaluating and selecting dielectrics for 2D TMDs with the aim of realizing high-performance FETs using industry compatible approaches.