Spin injection in graphene using ferromagnetic van der Waals contacts of indium and cobalt.

Abstract

Graphene-based spintronic devices require efficient spin injection, and dielectric tunnel barriers are typically used to facilitate spin injection. However, the direct growth of ultrathin dielectrics on two-dimensional surfaces is challenging and unreliable. Here we report spin injection in graphene lateral spin valves using ferromagnetic van der Waals contacts of indium and cobalt (In-Co), and without the deposition of dielectric tunnel barriers. With this approach, we obtain magnetoresistance values of 1.5% ± 0.5% (spin signal around 50 Ω), which is comparable to state-of-the-art graphene lateral spin valves with oxide tunnel barriers, with a working device yield of more than 70%. By contrast, lateral spin valves with non-van der Waals contacts containing only cobalt are inefficient and exhibit, at best, a magnetoresistance of around 0.2% (spin signal around 3 Ω). The contact resistance of our ferromagnetic indium-cobalt van der Waals contacts is 2-5 kΩ, which makes them compatible with complementary metal-oxide-semiconductor devices.