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dc.contributor.authorDinh, Duc Ven
dc.contributor.authorOehler, Fen
dc.contributor.authorZubialevich, VZen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorAlam, SNen
dc.contributor.authorCaliebe, Men
dc.contributor.authorScholz, Fen
dc.contributor.authorHumphreys, Colinen
dc.contributor.authorParbrook, PJen
dc.date.accessioned2014-10-20T08:34:39Z
dc.date.available2014-10-20T08:34:39Z
dc.date.issued2014-10-16en
dc.identifier.citationJournal of Applied Physics 116, 153505 (2014); http://dx.doi.org/10.1063/1.4898569en
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/246211
dc.description.abstractInGaN layers were grown simultaneously on (11¯22) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature ( 750oC), the indium content (<15%) of the (11¯22) and (0001) InGaN layers was similar. However, for temperatures less than 750oC, the indium content of the (11¯22) InGaN layers (15 - 26%) was generally lower than those with (0001) orientation (15 - 32%). The compositional deviation was attributed to the different strain relaxations between the (11¯22) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (11¯22) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (11 ¯22) InGaN layers with an indium content of more than 10% blue-shifted a constant value of (50 - 60) nm when using higher excitation power densities. This blue-shift was attributed to band lling effects in the layers.
dc.description.sponsorshipThis work was nancially supported by the EU-FP7 ALIGHT project, under agreement no. FP7-280587. This work was also partially supported by the Programme for Research in Third Level Institutions (PRTLI) fourth and fth cycles. SNA acknowledges nancial support for his postgraduate fellowship from the Iranian Ministry of Science, Research and Technology. PJP acknowledges nancial support for his Professorship from Science Foundation Ireland.
dc.languageEnglishen
dc.language.isoenen
dc.publisherAIP Publishing
dc.subjectIndium Gallium Nitrideen
dc.subjectMOVPEen
dc.subjectSemipolaren
dc.subjectAnisotropyen
dc.subjectPhotoluminescenceen
dc.titleComparative Study of Polar and Semipolar (11 22) InGaN layers Grown by Metalorganic Vapour Phase Epitaxyen
dc.typeArticle
dc.description.versionThis is the accepted manuscript. The final version is available from AIP at http://scitation.aip.org/content/aip/journal/jap/116/15/10.1063/1.4898569en
prism.number153505en
prism.publicationDate2014en
prism.publicationNameJournal of Applied Physicsen
prism.volume116en
dc.rioxxterms.funderERC
dc.rioxxterms.projectidFP7-280587
rioxxterms.versionofrecord10.1063/1.4898569en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2014-10-16en
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1089-7550
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/I012591/1)


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