Terahertz electromodulation spectroscopy of electron transport in GaN
Applied Physics Letters
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Engelbrecht, S., Arend, T., Zhu, T., Kappers, M., & Kersting, R. (2015). Terahertz electromodulation spectroscopy of electron transport in GaN. Applied Physics Letters, 106 (092107)https://doi.org/10.1063/1.4914326
Time-resolved terahertz (THz) electromodulation spectroscopy is applied to investigate the high-frequency transport of electrons in gallium nitride at different doping concentrations and densities of threading dislocations. At THz frequencies, all structures reveal Drude transport. The analysis of the spectral response provides the fundamental transport properties, such as the electron scattering time and the electrons’ conductivity effective mass. We observe the expected impact of ionized-impurity scattering and that scattering at threading dislocations only marginally affects the high-frequency mobility.
gallium nitride, terahertz spectroscopy, electrical conductivity
The research was supported by the German Science Foundation DFG under grants Ke 516/1-2 and Ke 516/6- 1.
External DOI: https://doi.org/10.1063/1.4914326
This record's URL: https://www.repository.cam.ac.uk/handle/1810/247750