Segregation of In to dislocations in InGaN
Horton, Matthew K
Haigh, Sarah J
Pennycook, Timothy J
Dusane, Rajiv O
American Chemical Society
MetadataShow full item record
Horton, M. K., Rhode, S., Sahonta, L., Kappers, M., Haigh, S. J., Pennycook, T. J., Humphreys, C., et al. (2015). Segregation of In to dislocations in InGaN. Nano Letters, 15 923-930. https://doi.org/10.1021/nl5036513
Dislocations are one-dimensional topological defects which occur frequently in functional thin film materials and which are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure re expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.
Dislocations, III-nitrides, Monte Carlo, alloy segregation, atomistic modeling, STEM-EDX
This work was funded in part by the Cambridge Commonwealth trust, St. John’s College and the EPSRC. SKR is funded through the Cambridge-India Partnership Fund and Indian Institute of Technology Bombay via a scholarship. MAM acknowledges support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC through the UK National Facility for Aberration-Corrected STEM (SuperSTEM). The Titan 80- 200kV ChemiSTEMTM was funded through HM Government (UK) and is associated with the capabilities of the University of Manchester Nuclear Manufacturing (NUMAN) capabilities. SJH acknowledges funding from the Defence Treat Reduction Agency (DTRA) USA (grant number HDTRA1-12-1-0013).
External DOI: https://doi.org/10.1021/nl5036513
This record's URL: https://www.repository.cam.ac.uk/handle/1810/248321