Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics
Royal Society of Chemistry
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Sanders, S., Cabrero-Vilatela, A., Kidambi, P., Alexander-Webber, J. A., Weijtens, C., Braeuninger-Weimer, P., Aria, I., et al. (2015). Engineering high charge transfer n-doping of graphene electrodes and its application to organic electronics. Nanoscale, 7 13135-13142. https://doi.org/10.1039/C5NR03246F
Using thermally evaporated cesium carbonate (Cs_2CO_3) in an organic matrix, we present a novel strategy for efficient n-doping of monolayer graphene and a ~90% reduction in its sheet resistance to ~250 Ohm/sq. Photoemission spectroscopy confirms the presence of a large interface dipole of ~0.9 eV between graphene and the Cs_2CO_3/organic matrix. This leads to a strong charge transfer based doping of graphene with a Fermi level shift of ~1.0 eV. Using this approach we demonstrate efficient, standard industrial manufacturing process compatible graphene-based inverted organic light emitting diodes on glass and flexible substrates with efficiencies comparable to those of state-of-the-art ITO based devices.
Funding via EU FP7 programme Grafol (Grant No. 285275) and EPSRC programme GRAPHTED (Grant No. EP/K016636/1) is acknowledged. P.R.K. acknowledges the Lindemann Trust Fellowship. J.A.A.-W. acknowledges a Research Fellowship from Churchill College, Cambridge. A.C.V. acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship.
European Commission (285275)
External DOI: https://doi.org/10.1039/C5NR03246F
This record's URL: https://www.repository.cam.ac.uk/handle/1810/248871