Dislocation core structures in Si-doped GaN
Applied Physics Letters
MetadataShow full item record
Rhode, S., Horton, M., Fu, W., Sahonta, L., Kappers, M., Pennycook, T., Humphreys, C., et al. (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters, 107 (243104)https://doi.org/10.1063/1.4937457
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaNfilms with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) × 109 cm−2. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.
This work was funded in part by the Cambridge Commonwealth trust, St. John's College, British Federation of Women Graduates and the EPSRC. M.A.M. acknowledges the support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC through the UK National Facility for Aberration-Corrected STEM (SuperSTEM).
External DOI: https://doi.org/10.1063/1.4937457
This record's URL: https://www.repository.cam.ac.uk/handle/1810/253366
Attribution-NonCommercial 2.0 UK: England & Wales
Licence URL: http://creativecommons.org/licenses/by-nc/2.0/uk/
Recommended or similar items
The following licence files are associated with this item: