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dc.contributor.authorDavies, MJen
dc.contributor.authorHammersley, Sen
dc.contributor.authorMassabuau, Fabienen
dc.contributor.authorDawson, Pen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorHumphreys, Colinen
dc.date.accessioned2016-02-18T15:57:25Z
dc.date.available2016-02-18T15:57:25Z
dc.date.issued2016-02-05en
dc.identifier.citationM.J. Davies et al. Journal of Applied Physics (2016). volume 119: pp. 055708-1 - 055708-8. DOI:10.1063/1.4941321en
dc.identifier.issn0021-8979
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/253847
dc.description.abstractIn this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum con- fined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with nonradiative recombination processes.
dc.description.sponsorshipThis work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/ H011676/1.
dc.languageEnglishen
dc.language.isoenen
dc.publisherAIP Publishing
dc.rightsAttribution 2.0 UK: England & Wales*
dc.rights.urihttp://creativecommons.org/licenses/by/2.0/uk/*
dc.subjectphotoluminescenceen
dc.subjectemission spectraen
dc.subjectelectric fieldsen
dc.subjectmultiple quantum wellsen
dc.subjectphotonsen
dc.titleA comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayersen
dc.typeArticle
dc.provenanceOA-7114
dc.description.versionThis is the final version of the article. It first appeared from AIP Publishing via http://dx.doi.org/10.1063/1.4941321en
prism.endingPage0557088
prism.publicationDate2016en
prism.publicationNameJournal of Applied Physicsen
prism.startingPage0557081
prism.volume119en
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidEP/I012591/1
dc.rioxxterms.projectidEP/ H011676/1
rioxxterms.versionofrecord10.1063/1.4941321en
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2016-02-05en
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1089-7550
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/I012591/1)
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEPSRC (EP/H019324/1)
pubs.funder-project-idEPSRC (EP/M010589/1)


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Attribution 2.0 UK: England & Wales
Except where otherwise noted, this item's licence is described as Attribution 2.0 UK: England & Wales