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dc.contributor.authorDavies, MJ
dc.contributor.authorHammersley, S
dc.contributor.authorMassabuau, FCP
dc.contributor.authorDawson, P
dc.contributor.authorOliver, RA
dc.contributor.authorKappers, MJ
dc.contributor.authorHumphreys, CJ
dc.identifier.citationM.J. Davies et al. Journal of Applied Physics (2016). volume 119: pp. 055708-1 - 055708-8. DOI:10.1063/1.4941321
dc.description.abstractIn this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum con- fined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with nonradiative recombination processes.
dc.description.sponsorshipThis work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/ H011676/1.
dc.publisherAIP Publishing
dc.rightsAttribution 2.0 UK: England & Wales
dc.subjectemission spectra
dc.subjectelectric fields
dc.subjectmultiple quantum wells
dc.titleA comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
dc.description.versionThis is the final version of the article. It first appeared from AIP Publishing via
prism.publicationNameJournal of Applied Physics
dc.rioxxterms.projectidEP/ H011676/1
dc.contributor.orcidHammersley, S [0000-0002-1694-8571]
dc.contributor.orcidDawson, P [0000-0002-5954-4470]
dc.contributor.orcidOliver, RA [0000-0003-0029-3993]
dc.contributor.orcidHumphreys, CJ [0000-0001-5053-3380]
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/I012591/1)
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/H019324/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1)

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Attribution 2.0 UK: England & Wales
Except where otherwise noted, this item's licence is described as Attribution 2.0 UK: England & Wales