Show simple item record

dc.contributor.authorHammersley, Simonen
dc.contributor.authorKappers, Mennoen
dc.contributor.authorMassabuau, Fabienen
dc.contributor.authorSahonta, Lataen
dc.contributor.authorDawson, Philen
dc.contributor.authorOliver, Rachelen
dc.contributor.authorHumphreys, Colinen
dc.date.accessioned2016-02-19T11:48:24Z
dc.date.available2016-02-19T11:48:24Z
dc.date.issued2016-02-03en
dc.identifier.citationHammersley et al. Physica Status Solidi (C) (2016). doi: 10.1002/pssc.201510187en
dc.identifier.issn1862-6351
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/253857
dc.description.abstractIn this paper we report on the impact that the quantum well growth temperature has on the internal quantum efficiency and carrier recombination dynamics of two sets of InGaN/GaN multiple quantum well samples, designed to emit at 460 and 530 nm, in which the indium content of the quantum wells within each sample set was maintained. Measurements of the internal quantum efficiency of each sample set showed a systematic variation, with quantum wells grown at a higher temperature exhibiting higher internal quantum efficiency and this variation was preserved at all excitation power densities. By investigating the carrier dynamics at both 10 K and 300 K we were able to attribute this change in internal quantum efficiency to a decrease in the non-radiative recombination rate as the QW growth temperature was increased which we attribute to a decrease in incorporation of the point defects.
dc.description.sponsorshipThis work was carried out with the financial support of the United Kingdom Engineering and Physical Sciences Research Council under Grant Nos. EP/I012591/1 and EP/H011676/1.
dc.languageEnglishen
dc.language.isoenen
dc.publisherWiley
dc.rightsAttribution 4.0 International
dc.rightsAttribution 4.0 Internationalen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectgreen gapen
dc.subjectInGaNen
dc.subjectquantum wellsen
dc.subjectefficiencyen
dc.subjectphotoluminescenceen
dc.titleEffect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structuresen
dc.typeArticle
dc.description.versionThis is the final version of the article. It first appeared from Wiley via https://doi.org/10.1002/pssc.201510187en
prism.endingPage213
prism.publicationDate2016en
prism.publicationNamePhysica Status Solidi (C)en
prism.startingPage209
prism.volume13en
dc.rioxxterms.funderEPSRC
dc.rioxxterms.projectidEP/I012591/1
dc.rioxxterms.projectidEP/H011676/1
rioxxterms.versionofrecord10.1002/pssc.201510187en
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/en
rioxxterms.licenseref.startdate2016-02-03en
dc.contributor.orcidMassabuau, Fabien [0000-0003-1008-1652]
dc.contributor.orcidSahonta, Lata [0000-0002-0135-0761]
dc.contributor.orcidHumphreys, Colin [0000-0001-5053-3380]
dc.identifier.eissn1610-1642
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEuropean Research Council (279361)
pubs.funder-project-idEPSRC (EP/H019324/1)
pubs.funder-project-idEPSRC (EP/I012591/1)
pubs.funder-project-idEPSRC (EP/M010589/1)
cam.orpheus.successThu Jan 30 12:55:22 GMT 2020 - The item has an open VoR version.*
rioxxterms.freetoread.startdate2100-01-01


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record

Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International