A novel, two-step top seeded infiltration and growth process for the fabrication of single grain, bulk (RE)BCO superconductors
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A fundamental requirement of the fabrication of high performing, (RE)–Ba–Cu–O bulk superconductors is achieving a single grain microstructure that exhibits good flux pinning properties. The top seeded melt growth (TSMG) process is a well-established technique for the fabrication of single grain (RE)BCO bulk samples and is now applied routinely by a number of research groups around the world. The introduction of a buffer layer to the TSMG process has been demonstrated recently to improve significantly the general reliability of the process. However, a number of growth-related defects, such as porosity and the formation of micro-cracks, remain inherent to the TSMG process, and are proving difficult to eliminate by varying the melt process parameters. The seeded infiltration and growth (SIG) process has been shown to yield single grain samples that exhibit significantly improved microstructures compared to the TSMG technique. Unfortunately, however, SIG leads to other processing challenges, such as the reliability of fabrication, optimisation of RE
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1361-6668
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Engineering and Physical Sciences Research Council (EP/K02910X/1)