Stability under Gate Bias Stressing of Amorphous Oxide Thin Film Transistors
Accepted version
Peer-reviewed
Repository URI
Repository DOI
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Authors
Niang, KM
Flewitt, AJ
Abstract
Stability of amorphous zinc tin oxide thin film transistors (TFTs) is investigated under positive bias stressing (PBS) at temperatures between 65 and 105 °C. The time and temperature dependence of the threshold voltage shift is analyzed using a thermalization energy concept. A maximum energy barrier to defect migration of 0.76 eV and the attempt-to-escape frequency of 10
Description
Keywords
40 Engineering, 4016 Materials Engineering
Journal Title
ECS Transactions
Conference Name
Journal ISSN
1938-5862
1938-5862
1938-5862
Volume Title
75
Publisher
The Electrochemical Society
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/M013650/1)