Yttrium passivation of defects in GeO$_{2}$ and GeO$_{2}$/Ge interfaces
Publication Date
2017-01-19Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP Publishing
Volume
110
Number
032104032104
Language
English
Type
Article
This Version
VoR
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Li, H., & Robertson, J. (2017). Yttrium passivation of defects in GeO$_{2}$ and GeO$_{2}$/Ge interfaces. Applied Physics Letters, 110 (032104032104)https://doi.org/10.1063/1.4974291
Abstract
Alloying amorphous GeO$_{2}$ with Y$_{2}$O$_{3}$ has been found experimentally to improve its chemical stability and electrical reliability as a gate dielectric in Ge-based field effect transistors. The mechanism is explained here based on density functional calculations. The GeO$_{2}$ reliability problem is correlated with oxygen deficiency defects, which generate gap states near the band-edges of the underlying Ge. These can be passivated through Y doping. This shifts the defect gap state out of the gap up into the GeO$_{2}$ conduction band, thus effectively passivating gap states in the GeO$_{2}$ layer.
Sponsorship
We acknowledge funding from EPSRC, Grant No. EP/M009297.
Funder references
EPSRC (EP/M009297/1)
EPSRC (EP/I014047/1)
Identifiers
External DOI: https://doi.org/10.1063/1.4974291
This record's URL: https://www.repository.cam.ac.uk/handle/1810/263181
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