Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Journal of Crystal Growth
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Qian, H., Lee, K., Vajargah, S., Novikov, S., Guiney, I., Zaidi, Z., Jiang, S., et al. (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459 185-188. https://doi.org/10.1016/j.jcrysgro.2016.12.025
A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.
A1. Wet etching, A1. Semi-polar (11-22) GaN, A3. Molecular beam epitaxy, A3. Metalorganic chemical vapour deposition, B1. AlGaN/GaN, B3. Vertical Heterostructure Field E ff ect Transisto (VHFET)
This work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics).
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External DOI: https://doi.org/10.1016/j.jcrysgro.2016.12.025
This record's URL: https://www.repository.cam.ac.uk/handle/1810/263927