Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
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Peer-reviewed
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Abstract
A novel V-groove vertical heterostructure field effect transistor structure is proposed using semi-polar (11-22) GaN. A crystallographic potassium hydroxide self-limiting wet etching technique was developed to enable a damage-free V-groove etching process. An AlGaN/GaN HFET structure was successfully regrown by molecular beam epitaxy on the V-groove surface. A smooth AlGaN/GaN interface was achieved which is an essential requirement for the formation of a high mobility channel.
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Keywords
A1. Wet etching, A1. Semi-polar (11-22) GaN, A3. Molecular beam epitaxy, A3. Metalorganic chemical vapour deposition, B1. AlGaN/GaN, B3. Vertical Heterostructure Field E ff ect Transisto (VHFET)
Journal Title
Journal of Crystal Growth
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Journal ISSN
0022-0248
1873-5002
1873-5002
Volume Title
459
Publisher
Elsevier
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Sponsorship
Engineering and Physical Sciences Research Council (EP/N01202X/1)
This work was funded by the Engineering and Physical Sciences Research Council (EPSRC), United Kingdom, under EP/K014471/1 (Silicon Compatible GaN Power Electronics).