Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
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Zhu, T., Liu, Y., Ding, T., Fu, W., Jarman, J., Ren, C., Kumar, R., & et al. (2017). Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification. Scientific Reports, 7 (45344)https://doi.org/10.1038/srep45344
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices.
This research was supported by the UK Engineering and Physical Sciences Research Council Grants EP/J003603/1 and EP/M011682/1. The microscopy studies were supported by the European Research Council under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC grant agreement no 279361 (MACONS). Dr. T. Ding acknowledges the support from Leverhulme Early Career Fellowship (ECF-2016-606).
European Research Council (279361)
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External DOI: https://doi.org/10.1038/srep45344
This record's URL: https://www.repository.cam.ac.uk/handle/1810/264230
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