Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
Published version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Zheng, B
Croxall, AF
Waldie, J https://orcid.org/0000-0002-0839-6949
Das Gupta, K https://orcid.org/0000-0002-3941-0520
Sfigakis, F
Abstract
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double
quantum well structure that can be configured as both an electron-hole bilayer
and a hole-hole bilayer, with an insulating barrier of only 10 nm between the
two quantum wells. The Coulomb drag resistivity is a direct measure of the
strength of the interlayer particle-particle interactions. We explore the
strongly interacting regime of low carrier densities (2D interaction parameter
Description
Keywords
cond-mat.mes-hall, cond-mat.mes-hall
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
108
Publisher
AIP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/J003417/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)
Engineering and Physical Sciences Research Council (EP/K004077/1)
Engineering and Physical Sciences Research Council (EP/H017720/1)
Engineering and Physical Sciences Research Council (EP/K004077/1)
This work was financially supported by the UK Engineering and Physical Sciences Research Council. A.F.C. acknowledges financial support from Trinity College, Cambridge, and IF from Toshiba Research Europe.