Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping
Physical Review Applied
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Zhao, R., Rossi, A., Giblin, S., Fletcher, J., Hudson, F., Möttönen, M., Kataoka, M., & et al. (2017). Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping. Physical Review Applied, 8 (4)https://doi.org/10.1103/PhysRevApplied.8.044021
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (654712)
External DOI: https://doi.org/10.1103/PhysRevApplied.8.044021
This record's URL: https://www.repository.cam.ac.uk/handle/1810/271600