Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors.
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Publication Date
2018-08-21Journal Title
Materials (Basel, Switzerland)
ISSN
1996-1944
Volume
11
Issue
9
Language
eng
Type
Article
Physical Medium
Electronic
Metadata
Show full item recordCitation
Griffin, P., Zhu, T., & Oliver, R. (2018). Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors.. Materials (Basel, Switzerland), 11 (9)https://doi.org/10.3390/ma11091487
Abstract
Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process which can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE process to realise AlGaN-based ultraviolet DBRs. These are of interest because they could provide a pathway to non-absorbing UV reflectors to enhance the performance of UV LEDs, which currently have extremely low efficiency. We have demonstrated porous AlGaN-based UV DBRs with a peak reflectance of 89 % at 324 nm. The uniformity of these devices is currently low, as the as-grown material has a high density of V-pits and these alter the etching process. However, our results indicate that if the material growth is optimised, the ECE process will be useful for the fabrication of UV reflectors.
Sponsorship
EPSRC (EP/R511675/1)
EPSRC (EP/M010589/1)
EPSRC (1645842)
EPSRC (EP/M011682/1)
EPSRC (1645842)
EPSRC (EP/R04502X/1)
Identifiers
External DOI: https://doi.org/10.3390/ma11091487
This record's URL: https://www.repository.cam.ac.uk/handle/1810/284965