Quantifying defects in graphene via Raman spectroscopy at different excitation energies.
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Authors
Cançado, LG
Jorio, A
Ferreira, EH Martins
Stavale, F
Achete, CA
Capaz, RB
Moutinho, MVO
Lombardo, A
Kulmala, TS
Ferrari, AC
Publication Date
2011-08-10Journal Title
Nano Lett
ISSN
1530-6984
Publisher
American Chemical Society (ACS)
Volume
11
Issue
8
Pages
3190-3196
Language
eng
Type
Article
Physical Medium
Print-Electronic
Metadata
Show full item recordCitation
Cançado, L., Jorio, A., Ferreira, E. M., Stavale, F., Achete, C., Capaz, R., Moutinho, M., et al. (2011). Quantifying defects in graphene via Raman spectroscopy at different excitation energies.. Nano Lett, 11 (8), 3190-3196. https://doi.org/10.1021/nl201432g
Abstract
We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.
Sponsorship
Engineering and Physical Sciences Research Council (EP/G042357/1)
Identifiers
External DOI: https://doi.org/10.1021/nl201432g
This record's URL: https://www.repository.cam.ac.uk/handle/1810/286110
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