On the Specific on-State Resistance of Superjunction MOSFETs With a Compensated Pillar

In this letter, we report an analytical model for the on-state characteristics of a superjunction (SJ) metal–oxide–semiconductor field effect transistor, featuring a compensated pillar between the n-pillar and the p-pillar. Since a large amount of lateral electric field is sustained in the compensated region, the doping concentration in the n-pillar can be enhanced significantly, leading to a substantial reduction in the on-state resistance of the SJ. Simulation results proved that the use of an extra compensated pillar within the SJ structure reduces the on-state resistance by 25% compared to that of a conventional SJ for the same breakdown voltage.

Keywords

40 Engineering, 4009 Electronics, Sensors and Digital Hardware

Journal Title

IEEE Electron Device Letters

Journal ISSN

0741-3106
1558-0563

Volume Title

39

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publisher DOI

https://doi.org/10.1109/led.2018.2877731

Rights and licensing

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Sponsorship

Engineering and Physical Sciences Research Council (EP/L007010/1)

Collections

University of Cambridge Research Outputs (Articles and Conferences)