The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique

Thumbnail
View / Open Files
Authors
  Chai, Z
  Zhang, W
  Freitas, P
  Hatem, F
  Zhang, JF
Marsland, J
Govoreanu, B
Publication Date
2018
Journal Title
IEEE Electron Device Letters
ISSN
0741-3106
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
39
Issue
7
Pages
955-958
Type
Article
This Version
AM
Metadata
Show full item record
Citation
Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J., Marsland, J., Govoreanu, B., et al. (2018). The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE Electron Device Letters, 39 (7), 955-958. https://doi.org/10.1109/LED.2018.2833149
Keywords
Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2
Sponsorship
Engineering and Physical Sciences Research Council (EP/M009297/1)
Engineering and Physical Sciences Research Council (EP/P005152/1)
Identifiers
External DOI: https://doi.org/10.1109/LED.2018.2833149
This record's URL: https://www.repository.cam.ac.uk/handle/1810/287112
Rights
Licence:
http://www.rioxx.net/licenses/all-rights-reserved
Statistics



Total file downloads (since January 2020). For more information on metrics see the IRUS guide.