The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique
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Authors
Marsland, J
Govoreanu, B
Goux, L
Kar, GS
Robertson, J
Publication Date
2018Journal Title
IEEE Electron Device Letters
ISSN
0741-3106
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
39
Issue
7
Pages
955-958
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J., Marsland, J., Govoreanu, B., et al. (2018). The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE Electron Device Letters, 39 (7), 955-958. https://doi.org/10.1109/LED.2018.2833149
Keywords
Resistive switching, RRAM, over-reset, defect profile, random telegraph noise, Ta2O5, HfO2
Sponsorship
Engineering and Physical Sciences Research Council (EP/M009297/1)
Engineering and Physical Sciences Research Council (EP/P005152/1)
Identifiers
External DOI: https://doi.org/10.1109/LED.2018.2833149
This record's URL: https://www.repository.cam.ac.uk/handle/1810/287112
Rights
Licence:
http://www.rioxx.net/licenses/all-rights-reserved
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