The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique

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Authors

  Chai, Z

  Zhang, W

  Freitas, P

  Hatem, F

  Zhang, JF

Marsland, J

Govoreanu, B

Goux, L

Kar, GS

  Hall, S

  Chalker, P

Robertson, John

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Publication Date

2018-07

Journal Title

IEEE Electron Device Letters

ISSN

0741-3106

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Volume

39

Issue

7

Pages

955-958

Type

Article

This Version

AM

Metadata

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Citation

Chai, Z., Zhang, W., Freitas, P., Hatem, F., Zhang, J., Marsland, J., Govoreanu, B., et al. (2018). The Over-Reset Phenomenon in Ta<inf>2</inf>O<inf>5</inf> RRAM Device Investigated by the RTN-Based Defect Probing Technique. IEEE Electron Device Letters, 39 (7), 955-958. https://doi.org/10.1109/LED.2018.2833149

Sponsorship

Engineering and Physical Sciences Research Council (EP/M009297/1)

Engineering and Physical Sciences Research Council (EP/P005152/1)

Identifiers

External DOI: https://doi.org/10.1109/LED.2018.2833149

This record's URL: https://www.repository.cam.ac.uk/handle/1810/287112

Rights

Licence:

http://www.rioxx.net/licenses/all-rights-reserved

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