Printed subthreshold organic transistors operating at high gain and ultralow power.
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Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of <1 nanowatt. The use of a Schottky barrier for the source gave the transistor geometry-independent electrical characteristics and accommodated the large dimensional variation in inkjet-printed features. These transistors exhibited good reliability with negligible threshold-voltage shift. We demonstrated this capability with an ultralow-power high-gain amplifier for the detection of electrophysiological signals and showed a signal-to-noise ratio of >60 decibels and noise voltage of <0.3 microvolt per hertz1/2 at 100 hertz.
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1095-9203
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European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (645760)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (685758)
European Commission Horizon 2020 (H2020) Research Infrastructures (RI) (692373)