Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell.
Nanomaterials (Basel, Switzerland)
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Greenberg, Y., Kelrich, A., Cohen, S., Kar-Narayan, S., Ritter, D., & Calahorra, Y. (2019). Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell.. Nanomaterials (Basel, Switzerland), 9 (9)https://doi.org/10.3390/nano9091327
Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here we report metal-organic molecular beam epitaxy of bent InP/InAs core/shell nanowires, brought by precursor flow directionality in the growth chamber. We report the reduction of bending with increased core diameter. We further analyze the composition of a single nanowire, and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. Simulations show the interplay between material composition, shell thickness and tapering in determining the bending. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III-Vs nanowire growth.
European Commission (639526)
External DOI: https://doi.org/10.3390/nano9091327
This record's URL: https://www.repository.cam.ac.uk/handle/1810/296866
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/