Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides.
Williams, Cyan A
Neaton, Jeffrey B
American Chemical Society (ACS)
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Bretscher, H., Li, Z., Xiao, J., Qiu, D. Y., Refaely-Abramson, S., Alexander-Webber, J., Tanoh, A., et al. (2021). Rational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides.. ACS Nano https://doi.org/10.1021/acsnano.1c01220
Structural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.
Engineering and Physical Sciences Research Council (EP/M006360/1)
European Research Council (758826)
Royal Commission for the Exhibition of 1851 (RF474/2016)
Royal Society (DHF\F1\191163)
European Research Council (756962)
External DOI: https://doi.org/10.1021/acsnano.1c01220
This record's URL: https://www.repository.cam.ac.uk/handle/1810/322241
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