Author Correction: Optoelectronic mixing with high-frequency graphene transistors.
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Authors
Montanaro, A https://orcid.org/0000-0002-2844-0433
Wei, W
De Fazio, D https://orcid.org/0000-0003-3327-078X
Sassi, U
Abstract
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs).
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Springer Science and Business Media LLC